EFA060BB-100F Datasheet - Excelics Semiconductor, Inc.
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EFA060BB-100F
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MFG CO.
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• HERMETIC 100mil CERAMIC FLANGE PACKAGE
• +25.0dBm TYPICAL OUTPUT POWER
• 8.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
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MFG CO.
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