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EFA160A Datasheet - Excelics Semiconductor, Inc.

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EFA160A

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2 Pages

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30.2 kB

MFG CO.
Excelics
Excelics Semiconductor, Inc. Excelics

Low Distortion GaAs Power FET

• +29.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE

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Part Name
Description
PDF
MFG CO.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.

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