BD650 Datasheet - Inchange Semiconductor
Part Name
BD650
Description
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page
2 Pages
File Size
82.5 kB
MFG CO.
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO = -100V(Min)
·High DC Current Gain : hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD649
APPLICATIONS
·Designed for use as complementary AF push-pull output stage applications
Part Name
Description
PDF
MFG CO.
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