BD650 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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BD650

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BD650

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·High DC Current Gain

: hFE= 750(Min) @IC= -3A

·Low Saturation Voltage

·Complement to Type BD649

APPLICATIONS

·Designed for use as complementary AF push-pull output

stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICP

Collector Current-Peak

-12

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ Ta=25℃

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-0.3

A

2

W

62.5

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

2

62.5

℃/W

℃/W

isc Website：www.iscsemi.cn

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