BD638 Datasheet - Inchange Semiconductor
Part Name
BD638
Description
Other PDF
no available.
PDF
page
2 Pages
File Size
78.5 kB
MFG CO.
Inchange Semiconductor
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
·Complement to Type BD637
APPLICATIONS
·Designed for amplifier and switching applications.
Part Name
Description
PDF
MFG CO.
Share Link: