2SB1373 Datasheet - New Jersey Semiconductor
Part Name
2SB1373
Description
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2 Pages
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87.3 kB
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min)
• Wide Area of Safe Operation
• Complement to Type 2SD2066
APPLICATIONS
• Designed for high power amplifications.
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Description
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MFG CO.
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