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BB505M Datasheet - Renesas Electronics

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Part Name
BB505M

Other PDF
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page
9 Pages

File Size
178.8 kB

MFG CO.
Renesas
Renesas Electronics Renesas

Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.5 dB typ. at f = 900 MHz
• High gain; PG = 24 dB typ. at f = 900 MHz
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143mod)

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Part Name
Description
PDF
MFG CO.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics

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