BB505M View Datasheet(PDF) - Renesas Electronics
Part Name
Description
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BB505M Datasheet PDF : 9 Pages
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BB505M
Electrical Characteristics
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V(BR)DSS
Min
6
V(BR)G1SS
+6
V(BR)G2SS
+6
IG1SS
—
IG2SS
—
VG1S(off)
0.5
VG2S(off)
0.5
ID(op)
7
|yfs|
28
Ciss
1.4
Coss
1.0
Crss
—
PG
19
NF
—
Typ
—
—
—
—
—
0.7
0.7
11
33
1.75
1.4
0.03
24
1.5
Max
—
—
—
+100
+100
1.0
1.0
15
38
2.1
1.8
0.05
29
2.2
Unit
V
(Ta = 25°C)
Test Conditions
ID = 200 µA, VG1S = VG2S = 0
V IG1 = +10 µA, VG2S = VDS = 0
V IG2 = +10 µA, VG1S = VDS = 0
nA VG1S = +5 V, VG2S = VDS = 0
nA VG2S = +5 V, VG1S = VDS = 0
V VDS = 5 V, VG2S = 4 V, ID = 100 µA
V VDS = 5 V, VG1S = 5 V, ID = 100 µA
mA VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 220 kΩ
mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 220 kΩ, f = 1 kHz
pF VDS = 5 V, VG1 = 5 V, VG2S = 4 V
pF RG = 220 kΩ, f = 1 MHz
pF
dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V
dB RG = 220 kΩ, f = 900 MHz
Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
VG1
Gate 1
Drain
A
ID
Source
Rev.1.00, Jun.14.2004, page 2 of 8
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