2SB557 Datasheet - New Jersey Semiconductor
Part Name
2SB557
Description
Other PDF
no available.
PDF
page
2 Pages
File Size
84.2 kB
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)
• High Power Dissipation- : PC= 80W(Max)@TC=25℃
• Complement to Type 2SD427
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 50W high-fidelity audio frequency amplifier output stage.
Part Name
Description
PDF
MFG CO.
Share Link: