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2SB645 Datasheet - New Jersey Semiconductor

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Part Name
2SB645

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2 Pages

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84.3 kB

MFG CO.
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
• High Power Dissipation- : Pc= 150W(Max)@Tc=25°C
• Complement to Type 2SD665

APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 200W high-fidelity audio frequency amplifier output stage.

Page Link's: 1  2 
 

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