2SB502 Datasheet - New Jersey Semiconductor
Part Name
2SB502
Description
Other PDF
no available.
PDF
page
2 Pages
File Size
90.2 kB
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• High Power Dissipation-
: Pc=25W(Max)@Tc=25°C
APPLICATIONS
• Designed for audio power amplifier and regulator
applications.
Part Name
Description
PDF
MFG CO.
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