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Unisonic Technologies
Unisonic Technologies
Description : 50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR
IXYS CORPORATION
IXYS CORPORATION
Description : NCHANNEL ENHANCEMENT MODE RF MOSFET
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
Description : N-Channel POWER MOSFET (650V,12A)
Part Name(s) : BUZ31
Comset Semiconductors
Comset Semiconductors
Description : POWER MOS TRANSISTORS
Part Name(s) : H12N60 H12N60F
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
Description : N-Channel POWER MOSFET (600V,12A)
Part Name(s) : 2SK3683-01MR
Fuji Electric
Fuji Electric
Description : Fuji POWER MOSFET SuperFAP-G series Target Specification (Rev - 2002)
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
Description : L-Band Radar Pulsed POWER TRANSISTOR 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
Part Name(s) : MRF151A
Tyco Electronics
Tyco Electronics
Description : The RF MOSFET Line RF POWER Field-Effect TRANSISTOR N-Channel ENHANCEMENT-MODE MOSFET
Part Name(s) : EMD25N10A
Excelliance MOS Corp.
Excelliance MOS Corp.
Description : N‐Channel Logic Level ENHANCEMENT MODE Field Effect TRANSISTOR
Part Name(s) : BSS84
Chino-Excel Technology
Chino-Excel Technology
Description : P-Channel ENHANCEMENT MODE MOSFET
Part Name(s) : BUZ11 BUZ11-NR4941
ON Semiconductor
ON Semiconductor
Description : N-Channel POWER MOSFET 50V, 30A, 40 mΩ
Part Name(s) : EMD12N10H
Excelliance MOS Corp.
Excelliance MOS Corp.
Description : N‐Channel Logic Level ENHANCEMENT MODE Field Effect TRANSISTOR
Part Name(s) : EMB09N03H
Excelliance MOS Corp.
Excelliance MOS Corp.
Description : N‐Channel Logic Level ENHANCEMENT MODE Field Effect TRANSISTOR
Motorola => Freescale
Motorola => Freescale
Description : RF POWER Field-Effect TRANSISTOR
Part Name(s) : HVV1011-035
Advanced Semiconductor
Advanced Semiconductor
Description : 35 Watts, 50V, 1030-1090MHz 50us Pulse, 5% Duty
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
Description : L-Band Avionics Pulsed POWER TRANSISTOR 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
Description : L-Band Avionics Pulsed POWER TRANSISTOR 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and MODE-S Applications
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
Description : L-Band Avionics Pulsed POWER TRANSISTOR 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
Description : UHF Pulsed POWER TRANSISTOR 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
Part Name(s) : HVV1214-025
Advanced Semiconductor
Advanced Semiconductor
Description : 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty
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