HVV1214-100 Datasheet - HVVi Semiconductors, Inc.
Part Name
HVV1214-100
Other PDF
no available.
PDF
page
5 Pages
File Size
765 kB
MFG CO.
HVVi Semiconductors, Inc.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
FEATURES
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
Part Name
Description
PDF
MFG CO.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty for Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty ( Rev : V2 )
HVVi Semiconductors, Inc.
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty 2.7 - 3.1 GHz
Tyco Electronics
Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Share Link: