BZT52B2V4S View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
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BZT52B2V4S Datasheet PDF : 5 Pages
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Typical Characteristics
Zener Characteristics(V 5.1V to 20 V)
Z
100
PD =200mW
Ta =25℃
Pulsed
10
1
0.5
4
6
8
10
12
14
16
18
20
22
VZ, ZENER VOLTAGE (V)
Typical Leakage Current
0.1
Pulsed
0.01
Ta=100℃
1E-3
Ta=25℃
1E-4
4
1000
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
Ta=25℃
IZ(AC)=0.1IZ(DC)
f=1kHz
100
10
IZ=5mA
IZ=1mA
1
4
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
Temperature Coefficients
20
TYPICAL Ta VALUES
FOR BZT52BXXXS SERIES
15
VZ @ IZT
10
5
0
4
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
Ta=25℃
f=1MHz
100
0V BIAS
1V BIAS
10
BIAS AT
50% OF VZ NOM
1
4
6
8
10
12
14
16
18
20
22
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
3
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