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BZT52B2V4S View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd

Part Name
Description
View to exact match
BZT52B2V4S
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
BZT52B2V4S Datasheet PDF : 5 Pages
1 2 3 4 5
Electrical Characteristics (TA=25unless otherwise noted)
Type
Number
Type
Code
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
2WF
2WG
2WH
2WI
2WJ
2WK
2WL
2WM
2WN
2WO
2WP
2WQ
2WR
2WS
2WT
Zener Voltage Range (Note 2)
VZ@IZT
IZT
Nom(V) Min(V) Max(V) mA
2.4
2.35
2.45
5
2.7
2.65
2.75
5
3.0
2.94
3.06
5
3.3
3.23
3.37
5
3.6
3.53
3.67
5
3.9
3.82
3.98
5
4.3
4.21
4.39
5
4.7
4.61
4.79
5
5.1
5.00
5.20
5
5.6
5.49
5.71
5
6.2
6.08
6.32
5
6.8
6.66
6.94
5
7.5
7.35
7.65
5
8.2
8.04
8.36
5
9.1
8.92
9.28
5
10
9.80
10.20
5
11
10.78
11.22
5
12
11.76
12.24
5
13
12.74
13.26
5
15
14.70
15.30
5
16
15.68
16.32
5
18
17.64
18.36
5
20
19.60
20.40
5
22
21.56
22.44
5
24
23.52
24.48
5
27
26.46
27.54
2
30
29.40
30.60
2
33
32.34
33.66
2
36
35.28
36.72
2
39
38.22
39.78
2
Maximum Zener Impedance
(Note 3)
Maximum
Reverse
Current
ZZT@IZT
ZZK@IZK
IZK
IR
VR
mA
μA
V
100
600
1.0 50
1.0
100
600
1.0 20
1.0
95
600
1.0 10
1.0
95
600
1.0
5
1.0
90
600
1.0
5
1.0
90
600
1.0
3
1.0
90
600
1.0
3
1.0
80
500
1.0
3
2.0
60
480
1.0
2
2.0
40
400
1.0
1
2.0
10
150
1.0
3
4.0
15
80
1.0
2
4.0
15
80
1.0
1
5.0
15
80
1.0 0.7
5.0
15
100
1.0 0.5
6.0
20
150
1.0 0.2
7.0
20
150
1.0 0.1
8.0
25
150
1.0 0.1
8.0
30
170
1.0 0.1
8.0
30
200
1.0 0.1 10.5
40
200
1.0 0.1 11.2
45
225
1.0 0.1 12.6
55
225
1.0 0.1 14.0
55
250
1.0 0.1 15.4
70
250
1.0 0.1 16.8
80
300
0.5 0.1 18.9
80
300
0.5 0.1 21.0
80
325
0.5 0.1 23.1
90
350
0.5 0.1 25.2
130
350
0.5 0.1 27.3
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Typical
Temperature
Coefficent
@IZTC
Test
Current
IZTC
mV/°C
Min Max mA
-3.5 0
5
-3.5 0
5
-3.5 0
5
-3.5 0
5
-3.5 0
5
-3.5 0
5
-3.5 0
5
-3.5 0.2
5
-2.7 1.2
5
-2.0 2.5
5
0.4 3.7
5
1.2 4.5
5
2.5 5.3
5
3.2 6.2
5
3.8 7.0
5
4.5 8.0
5
5.4 9.0
5
6.0 10.0
5
7.0 11.0
5
9.2 13.0
5
10.4 14.0
5
12.4 16.0
5
14.4 18.0
5
16.4 20.0
5
18.4 22.0
5
21.4 25.3
2
24.4 29.4
2
27.4 33.4
2
30.4 37.4
2
33.4 41.2
2
High Diode Semiconductor
2

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