2SC2238 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

View to exact match

2SC2238

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE=1mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA

VBE(on) Base-Emitter On Voltage

IC=0.5A ; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 160V ; IE= 0

IEBO

Emitter Cutoff Current

VEB=5V; IC= 0

hFE

DC Current Gain

IC=0.1A ; VCE=5V

COB

Output Capacitance

IE= 0; VCB=10V; ftest= 1MHz

fT

Current-Gain—Bandwidth Product

IC=0.1A;VCE=10V

 hFE Classifications

O

Y

70-140 120-240

2SC2238

MIN TYP. MAX UNIT

160

V

5

V

1.5

V

1.0

V

1.0 μA

1.0 μA

70

240

25

pF

100

MHz

SPTECH website：www.superic-tech.com

2

Share Link: