SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO=160V(Min)
·Good Linearity of hFE
·Complement to Type 2SA968
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IE
Emitter Current- Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2238
SPTECH website:www.superic-tech.com
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