IPD090N03L View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

IPD090N03L

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=1mA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=30A

IGSS

Gate-Source Leakage Current

VGS= 20V; VDS= 0V

IDSS

Drain-Source Leakage Current

VDS=30V; VGS= 0V

VSD

Diode forward voltage

IF=30A, VGS = 0V

MIN TYP MAX UNIT

30

V

1

2.2

V

9

mΩ

0.1

μA

1

μA

1.1

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

Share Link: