IPD090N03L View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
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IPD090N03L Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤9mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
40
IDM
Drain Current-Single Pulsed
280
PD
Total Dissipation @TC=25℃
42
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
3.6
75
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
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