2N6248 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

View to exact match

2N6248

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA; RBE= 100Ω

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A

VBE(on) Base-Emitter On Voltage

IC= -5A ; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -40V; IB= 0

ICER

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -95V; RBE= 100Ω

VCE= -100V; VBE(off)= -1.5V

VCE= -90V; VBE(off)= -1.5V,TC=150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -5A ; VCE= -4V

hFE-2

DC Current Gain

IC= -10A ; VCE= -4V

2N6248

MIN MAX UNIT

-100

V

-110

V

-1.3

V

-3.5

V

-1.8

V

-1.0 mA

-0.2 mA

-0.2

-5.0

mA

-1.0 mA

20 100

5

SPTECH website：www.superic-tech.com

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