2N6248 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

View to exact match

2N6248

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·High DC Current Gain-

: hFE= 20-100(Min)@IC = -5A

·Low Saturation Voltage-

: VCE(sat)= -1.3V(Max)@ IC = -5A

APPLICATIONS

·Designed for general-purpose switching and linear amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-110

V

VCER

Collector-Emitter Voltage RBE= 100Ω

-110

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-5

A

PC

Collector Power Dissipation @TC=25℃ 125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.4 ℃/W

SPTECH website：www.superic-tech.com

2N6248

1

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