C4886 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
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C4886 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4886
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 25mA; IB= 0
150
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB=150V;IE=0
2.0
V
100 uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
100 u A
hFE
DC Current Gain
lc= 5A; VCE= 4V
50
180
fi
Current-Gain—Bandwidth Product
IE=-2A;VCE=12V
60
MHz
COB
Output Capacitance
lE=0;VcB=10V;f,est= 1.0MHz
200
PF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=5A;IB1=-IB2=-0.5A;
RL=12Q;VCC=60V
0.26
ws
1.5
us
0.35
us
hFE Classifications
o
P
Y
50-100 70-140 90-180
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