C4886 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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C4886 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4886
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=150V(Min)
• Complement to Type 2SA1860
APPLICATIONS
• Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
14
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
3
A
80
W
150
•c
Tstg
Storage Temperature Range
-55-150 °c
I '^; III
PIN 1.BASE
j !1
2, COLLECTOR
I 1I
3 EMITTER
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TO-3PML package
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U
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A
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H
K
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mm
DIM MIN MAX
A 19.90 20.10
B 15.90 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3,50
Q 2.90 3.10
H 5.90 6,10
J 0.595 0.605
K 22.30 22.50
L 1.90 2.10
N 10.80 11.00
Q 4.90 5.10
R 3,75 3,95
S 3..20 3.40
U 9.90 10.10
V 4.70 4.90
z 190 2,10
NJ Semi-Gmcluctors reserves the right lo change test conditions, parameter limits nnJ packiige dimensions uithout
notice. Informntion furnished by N.I Semi-Conductors is hdieved to he both ;iccur;ite and reliable ;it the time of going
to press. I Itmcver, N.I Seini-Condiietors ii.ssumes no rcsponsihililv for ;in> errors or omissions discovered in its use.
N.I Scini-CiMulnclors eneouriijies eiislomers to verify that d;it;i>heets ;ire ciinvnt before pliiciiig orders.
Qualiry Semi-Conductors
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