OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Diagram9:Drain-sourceon-stateresistance
5
Diagram10:Typ.gatethresholdvoltage
2.5
4
2.0
3
1.5
typ
2
1.0
1
0.5
0
-60
-20
20
60
100
140
180
Tj[°C]
0.0
-60
-20
20
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
104
Ciss
103
Coss
102
Crss
Diagram12:Forwardcharacteristicsofreversediode
103
-55 °C
25 °C
125 °C
150 °C
102
101
100
101
0
10
20
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
10-1
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
8
Rev.2.3,2016-02-03