BSC0902NSI View Datasheet(PDF) - Infineon Technologies
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Description
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BSC0902NSI Datasheet PDF : 13 Pages
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OptiMOSTMPower-MOSFET,30V
BSC0902NSI
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
100
-
65
-
89
-
56
-
23
-
400
-
50
-
30
-
20
-
48
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
A TC=25°C
A TC=25°C
mJ ID=40A,RGS=25Ω
V-
W
TC=25°C
TA=25°C,RthJA=50K/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area1)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
2.6 K/W -
-
-
20 K/W -
-
-
50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2016-02-03
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