BDX63 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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BDX63 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDX63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX63
Collector-Emitter
VCEO(SUS) Sustaining Voltage
BDX63A ;
BDX63B
I — Ifinm A -1 — fl
BDX63C
VcE(sat) Collector-Emitter Saturation Voltage lc=3A;lB=12mA
VsE(on) Base-Emitter On Voltage
lc=3A; VCE=3V
VECF
C-E Diode Forward Voltage
IF=3A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE- /sVcEOmaxI |B= 0
VCB= VcEOmax;lE= 0
VCB= 1/2VCBOmax;lE= 0;Tj= 200/C
VEB= 5V; lc=0
hpE-1
DC Current Gain
lc= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
lc= 3A ; VCE= 3V
hFE-3
DC Current Gain
lc= 8A ; VCE= 3V
COB
Output Capacitance
lE=0;VCB=10V;f,est=1MHz
Switching times
ton
Turn-on Time
'off
Turn-off Time
MIN TYP. MAX UNIT
60
80
V
100
120
2
V
2.5
V
1.2
V
0.2 mA
0.2
2
mA
5
mA
2500
1000
2600
100
PF
0.5
ps
5
^s
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