BDX63 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
View to exact match
BDX63 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDX63/A/B/C
DESCRIPTION
• Collector Current -lc= 8A
• High DC Current Gain-hF£= 1000(Min)@ lc= 3A
• Complement to Type BDX62/A/B/C
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDX63
80
VCBO
Collector-Base
Voltage
BDX63A
100
V
BDX63B
120
BDX63C
140
BDX63
60
BDX63A
80
VCEO
Collector-Emitter
Voltage
BDX63B
100
V
BDX63C
120
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
0.15
A
90
W
200
°C
Tstg
Storage Temperature Range
-65-200 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.94 'CM/
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
I
-*4U-D ?PL
Him
DIM MM MAX
A
39)00
8 26.30 26.67
t
7.80
S.30
D
0.90 1.10
E t 40 1 eo
G
1093
H
546
K 11 40 1350
L 1675 1705
N 1940 19.62
g
400 420
vu 3*9-W 3020
4.30 4 50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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