FSFM260N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FSFM260N Datasheet PDF : 18 Pages
| |||
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
SenseFET Section
BVDSS1
Drain Source Breakdown Voltage of
FSFM260 and FSFM300
VCC = 0V, ID = 250µA
BVDSS2
Drain Source Breakdown Voltage of
FSFM261
VCC = 0V, ID = 250µA
IDSS1
IDSS2
Zero Gate Voltage Drain Current1
Zero Gate Voltage Drain Current2
Static Drain Source on Resistance of
FSFM260(12)
VDS = 650V, VGS = 0V,
TC = 25°C
VDS = 520V, VGS = 0V,
TC = 125°C
RDS(ON)
Static Drain Source on Resistance of
FSFM261(12)
VGS = 10V, ID = 2.5A
Static Drain Source on Resistance of
FSFM300(12)
COSS Output Capacitance of FSFM260/261
td(on) Turn-On Delay Time of FSFM260/261
tr
Rise Time of FSFM260/261
td(off) Turn-Off Delay Time of FSFM260/261
tf
Fall Time of FSFM260/261
COSS Output Capacitance of FSFM300
td(on) Turn-On Delay Time of FSFM300
tr
Rise Time of FSFM300
td(off) Turn-Off Delay Time of FSFM300
tf
Fall Time of FSFM300
Control Section
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 325V, ID = 5A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 325V, ID = 5A
fOSC Switching Frequency
ΔfSTABLE Switching Frequency Stability
ΔfOSC Switching Frequency Variation(13)
IFB
Feedback Source Current
DMAX Maximum Duty Cycle
DMIN Minimum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
tS/S Internal Soft-Start Time
Burst Mode Section
VFB = 3V
13V ≤ VCC ≤ 18V
-25°C ≤ TA ≤ 85°C
VFB = GND
VFB = GND
VFB = 3V
VBURH
VBURL
Burst Mode Voltages
VCC = 14V
Min. Typ. Max. Unit
650
V
700
V
250 µA
250 µA
2.20 2.60 Ω
2.30 2.70 Ω
1.76 2.20 Ω
60
pF
12
20
ns
30
16
75
pF
14
26
ns
32
25
61 67 73 kHz
0
1
3
%
0 ±5 ±10 %
0.7 0.9 1.1 mA
71 77 83 %
0%
11 12 13 V
7
8
9
V
10 15 20 ms
0.50
V
0.35
V
© 2009 Fairchild Semiconductor Corporation
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1
6
www.fairchildsemi.com
Share Link: 