BUT12AF View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BUT12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
MGB914
1.0
(1)
(2)
0.5
(3)
0
10−1
(4)
1
10
IC/IB = 5.
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
(3) VCE; Tj = 100 °C.
(4) VCE; Tj = 25 °C.
IC (A)
102
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.
1.6
handbook, full pagewidth
VBE
(V)
1.4
(1)
1.2
(2)
(3)
1.0
MGB911
0.8
0
Tj = 25 °C.
(1) IC = 8 A.
1997 Aug 13
0.5
1
1.5
2
2.5
IB (A)
3
(2) IC = 6 A.
(3) IC = 3 A.
Fig.8 Base-emitter voltage as a function of collector current; typical values.
6
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