BUT12AF View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BUT12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-h
Rth j-a
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
5.5
3.9
55
UNIT
K/W
K/W
K/W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCESM
VCEO
ICsat
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
collector-emitter peak voltage
BUT12F
BUT12AF
collector-emitter voltage
BUT12F
BUT12AF
collector saturation current
BUT12F
BUT12AF
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
CONDITIONS
VBE = 0
open base
see Figs 2 and 4
see Fig.2
Th ≤ 25 °C; see Fig.3; note 1
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
MIN. MAX. UNIT
−
850
V
−
1000 V
−
400
V
−
450
V
−
6
A
−
5
A
−
8
A
−
20
A
−
4
A
−
6
A
−
23
W
−65
+150 °C
−
150
°C
ISOLATION CHARACTERISTICS
SYMBOL
VisolM
Cisol
PARAMETER
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
TYP.
−
−
MAX.
1 500
12
UNIT
V
pF
1997 Aug 13
2
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