IPS10N03LA(2004) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPS10N03LA Datasheet PDF : 11 Pages
| |||
13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
150 °C
100 °C
10
IPD10N03LA IPF10N03LA
IPS10N03LA IPU10N03LA
14 Typ. gate charge
V GS=f(Q gate); I D=15 A pulsed
parameter: V DD
12
15 V
10
25 °C
8
5V
20 V
6
4
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
2
1000
0
0
4
8
12
16
20
Q gate [nC]
16 Gate charge waveforms
Rev. 1.3
29
V GS
28
27
26
25
24
V g s(th)
23
22
21
20
-60
-20
20
60 100 140 180
T j [°C]
Q g(th)
Q gs
page 7
Qg
Q sw
Q gd
Q gate
2004-05-19
Share Link: 