IPS10N03LA(2004) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPS10N03LA Datasheet PDF : 11 Pages
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
IPD10N03LA IPF10N03LA
IPS10N03LA IPU10N03LA
Product Summary
V DS
R DS(on),max
ID
25 V
10.4 mΩ
30 A
Type
IPD10N03LA
IPF10N03LA
IPS10N03LA
IPU10N03LA
Package
P-TO252-3-11
Ordering Code Q67042-S4238
Marking
10N03LA
P-TO252-3-23
Q67042-S4239
10N03LA
P-TO251-3-11
Q67042-S4247
10N03LA
P-TO251-3-21
Q67042-S4242
10N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T C=25 °C2)
T C=100 °C
T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
210
80
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.3
page 1
2004-05-19
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