NTMFS4927NT1G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
View to exact match
NTMFS4927NT1G Datasheet PDF : 8 Pages
| |||
NTMFS4927N, NTMFS4927NC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge
QG(TOT)
8.0
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
1.6
QGS
VGS = 4.5 V, VDS = 15 V; ID = 30 A
3.1
nC
Gate−to−Drain Charge
QGD
3.1
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
16.0
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.2
25.5
ns
14.0
4.4
6.5
21.0
ns
18.0
3.0
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.87 1.1
V
0.76
21.4
10.5
ns
10.9
8.4
nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.00
nH
0.005
nH
1.84
nH
0.90 2.2
W
http://onsemi.com
3
Share Link: 