NTMFS4927NT1G View Datasheet(PDF) - ON Semiconductor
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Description
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NTMFS4927NT1G Datasheet PDF : 8 Pages
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NTMFS4927N, NTMFS4927NC
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Single Pulse Drain−to−Source Avalanche
EAS
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8″ from case for 10 s)
20
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
6.0
46.3
136.2
20.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 8.4 A,
Tcase = 25°C, ttransient = 100 ns
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
CISS
COSS
CRSS
CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
30
V
34
V
24
mV/°C
1.0
mA
10
±100
nA
1.32 1.6
3.7
5.8
5.7
9.6
9.2
40
2.2
V
mV/°C
7.3
mW
12
S
913
366
pF
108
0.118 0.237
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