BSB013NE2LXI(2011) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BSB013NE2LXI
(Rev.:2011)

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics

4

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter

Symbol

Min.

Drain-source breakdown voltage V(BR)DSS 25

Breakdown voltage temperature dV(BR)DSS -

coefficien

/dTj

Gate threshold voltage

VGS(th)

1

Zero gate voltage drain current IDSS

-

-

Values

Typ.

Max.

-

-

15

-

-

2.2

25

500

4

-

Gate-source leakage current

IGSS

-

Drain-source on-state resistance RDS(on) -

-

Gate resistance

Transconductance

RG

-

gfs

85

10

100

1.4

1.8

1.1

1.3

0.6

-

170

-

Unit Note / Test Condition

V

mV/K

µA

mA

nA

mΩ

Ω

S

VGS=0 V, ID=10 mA

ID=10 mA, reference to

25°C

VDS=VGS, ID=250 µA

VDS=20 V, VGS=0 V,

Tj=25 °C

VDS=20 V, VGS=0 V,

Tj=125 °C

VGS=20 V, VDS=0 V

VGS=4.5 V, ID=30A

VGS=10 V, ID=30 A

|VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dynamic characteristics

Parameter

Symbol

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Min.

-

-

-

-

-

-

-

Values

Typ.

4400

1900

190

5.4

6.4

32

4.8

Max.

-

-

-

-

-

-

-

Unit

pF

Note /

Test Condition

VGS=0 V, VDS=12 V,

f=1 MHz

ns

VDD=12V, VGS=10 V,

ID=30 A, RG= 1.6 Ω

Final Data Sheet

3

2.0, 2011-03-18

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