BSB013NE2LXI(2011) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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BSB013NE2LXI Datasheet PDF : 13 Pages
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OptiMOS™ Power-MOSFET
BSB013NE2LXI
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
ID
-
-
163
A
VGS=10 V, TC=25 °C
-
-
103
VGS=10 V, TC=100 °C
Pulsed drain current2)
Avalanche current, single pulse3)
ID,pulse
IAS
-
-
36
-
-
400
-
-
40
VGS=10 V, TA=25 °C,
RthJA=45 K/W)1)
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
130
mJ ID=40 A,RGS=25 Ω
Gate source voltage
VGS
-20 -
20
V
Power dissipation
Ptot
-
-
57
W TC=25 °C
-
-
2.8
TA=25 °C, RthJA=45 K/W
Operating and storage temperature Tj,Tstg
-40 -
150
°C
IEC climatic category; DIN IEC 68-1
-
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.
PCB is vertical in still air
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3 Thermal characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
1.0
-
°K/W bottom
-
-
2.2
top
Device on PCB
RthJA
-
-
45
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.
PCB is vertical in still air.
Final Data Sheet
2
2.0, 2011-03-18
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