NTMFS4835N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.77 1.0
V
0.70
27
50
15
ns
12
18
nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.65
nH
0.005
nH
1.84
nH
1.3
5.0
W
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