CY7C1018DV33 View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

View to exact match

CY7C1018DV33

1-Mbit (128 K × 8) Static RAM

Cypress Semiconductor 

CY7C1018DV33

CY7C1019DV33

Data Retention Characteristics

Over the Operating Range

Parameter

VDR

ICCDR

Description

VCC for data retention

Data retention current

tCDR [5]

tR[6]

Chip deselect to data retention

time

Operation recovery time

Conditions

VCC = VDR = 2.0 V, CE > VCC – 0.3 V,

VIN > VCC – 0.3 V or VIN < 0.3 V

Data Retention Waveform

VCC

CE

Figure 4. Data Retention Waveform

3.0 V

tCDR

DATA RETENTION MODE

VDR > 2 V

Min

Max Unit

2.0

–

V

–

3

mA

0

–

ns

tRC

–

ns

3.0 V

tR

Notes

5. Tested initially and after any design or process changes that may affect these parameters.

6. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 s or stable at VCC(min.) > 50 s.

Document Number: 38-05481 Rev. *J

Page 6 of 20

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