IRF7507 View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRF7507

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

10

- 2.0V

BOTTOM - 1.5V

1

P - Channel

100

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

10

- 2.0V

BOTTOM - 1.5V

1

IRF7507

0.1

0.01

0.1

-1.5V 20µs PULSE W IDTH

TJ = 25°C

A

1

10

-VDS , Drain-to-Source Voltage (V)

Fig 11. Typical Output Characteristics

10

TJ = 25°C

TJ = 150°C

1

0.1

0.01

1.5

VDS = -10V

20µs PULS E W IDTH

2.0

2.5

3.0

3.5

4.0

4.5

5.0A

-VG S , G ate-to-Source V olta ge (V)

Fig 13. Typical Transfer Characteristics

2.0

ID = -1.2A

1.5

1.0

0.5

0.0

-60

-40 -20 0

V GS = -4.5V

A

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 15. Normalized On-Resistance

Vs. Temperature

www.irf.com

0.1

-1.5V

0.01

0.1

20µs PULSE W IDTH

TJ = 150°C

A

1

10

-VD S , D rain-to-Source V oltage (V)

Fig 12. Typical Output Characteristics

10

TJ = 150°C

1

0.1

TJ = 25°C

0.01

0.4

VGS = 0V A

0.6

0.8

1.0

1.2

-VSD , S ourc e-to-D rain V oltage (V )

Fig 14. Typical Source-Drain Diode

Forward Voltage

1.0

0.8

0.6

VGS = -2.5V

0.4

VGS = -5.0V

0.2

0.0

0.0

0.5

1.0

1.5

2.0

-ID , Drain Current (A)

Fig 16. Typical On-Resistance Vs. Drain

Current

5

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