IRF7507 View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRF7507

HEXFET® Power MOSFET

International Rectifier 

IRF7507

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

N-Ch 20 — —

P-Ch -20 — —

V

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

N-Ch — 0.041 —

P-Ch — -0.012 —

N-Ch

—

—

0.085 0.14

0.120 0.20

P-Ch

—

—

0.17 0.27

0.28 0.40

N-Ch 0.7 — —

P-Ch -0.7 — —

V/°C

Ω

V

Reference to 25°C, ID = 1mA

Reference to 25°C, ID = -1mA

VGS = 4.5V, ID = 1.7A ƒ

VGS = 2.7V, ID = 0.85A ƒ

VGS = -4.5V, ID =-1.2Aƒ

VGS = -2.7V, ID =-0.6A ƒ

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

N-Ch 2.6 — —

P-Ch 1.3 — —

S

VDS = 10V, ID = 0.85A ƒ

VDS = -10V, ID = -0.6Aƒ

N-Ch — — 1.0

VDS = 16 V, VGS = 0V

P-Ch —

N-Ch —

— -1.0

— 25

µA

VDS = -16V, VGS = 0V

VDS = 16 V, VGS = 0V, TJ = 125°C

P-Ch — — -25

VDS = -16V, VGS = 0V, TJ = 125°C

N-P –– — ±100

VGS = ± 12V

N-Ch –– 5.3 8.0

P-Ch — 5.4 8.2

N-Channel

N-Ch –– 0.84 1.3

P-Ch — 0.96 1.4

nC

ID = 1.7A, VDS = 16V, VGS = 4.5V

„

N-Ch –– 2.2 3.3

P-Channel

P-Ch — 2.4 3.6

ID = -1.2A, VDS = -16V, VGS = -4.5V

N-Ch — 5.7 —

P-Ch — 9.1 —

N-Ch — 24 —

P-Ch — 35 —

N-Ch — 15 —

P-Ch — 38 —

N-Ch — 16 —

P-Ch — 43 —

N-Channel

VDD = 10V, ID = 1.7A, RG = 6.0Ω,

RD = 5.7Ω

ns

„

P-Channel

VDD = -10V, ID = -1.2A, RG = 6.0Ω,

RD = 8.3Ω

N-Ch — 260 —

N-Channel

P-Ch — 240 —

N-Ch — 130 —

pF

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

ƒ

P-Ch — 130 —

P-Channel

N-Ch — 61 —

P-Ch — 64 —

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

N-Ch — — 1.25

IS

Continuous Source Current (Body Diode)

P-Ch — — -1.25 A

N-Ch — — 19

ISM

Pulsed Source Current (Body Diode) 

P-Ch — — -14

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Ch —

P-Ch —

N-Ch —

P-Ch —

N-Ch —

P-Ch —

— 1.2 V

— -1.2

39 59 ns

52 78

37 56 nC

63 95

TJ = 25°C, IS = 1.7A, VGS = 0V ƒ

TJ = 25°C, IS = -1.2A, VGS = 0V ƒ

N-Channel

TJ = 25°C, IF = 1.7A, di/dt = 100A/µs

P-Channel

ƒ

TJ = 25°C, IF = -1.2A, di/dt = -100A/µs

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 21 )

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

2

„ Surface mounted on FR-4 board, t ≤ 10sec.

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