PN3563MPS3563 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

PN3563MPS3563

NPN RF Amplifier

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA= 25°C unless otherwise noted

Test Conditions

NPN RF Amplifier

(continued)

Min Max Units

OFF CHARACTERISTICS

VCEO(sus)

Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0

15

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

30

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

2.0

ICBO

Collector Cutoff Current

VCB = 15 V, IE = 0

VCB = 15 V, TA = 150°C

ON CHARACTERISTICS*

hFE

DC Current Gain

IC = 8.0 mA, VCE = 10 V

20

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Cibo

hfe

rb’CC

Current Gain - Bandwidth Product IC = 8.0 mA, VCE = 10 V,

600

f = 100 MHz

Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

VCB = 0, IE = 0, f = 1.0 MHz

Input Capacitance

VBE= 0.5 V, IC = 0, f = 140 MHz

Small-Signal Current Gain

IC = 8.0 mA, VCE = 10 V,

20

f = 1.0 MHz

Collector Base Time Constant

IC = 8.0 mA, VCE = 10 V,

8.0

f = 79.8 MHz

FUNCTIONAL TEST

Gpe

Amplifier Power Gain

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

IC = 8.0 mA, VCB = 10 V,

14

f = 200 MHz

0.05

5.0

200

1500

1.7

3.0

2.0

250

25

26

V

V

V

µA

nA

MHz

pF

pF

pF

pS

dB

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