PN3563MPS3563 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

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PN3563MPS3563

NPN RF Amplifier

Fairchild Semiconductor 

PN3563

C

BE

TO-92

NPN RF Amplifier

This device is designed for use as RF amplifiers, oscillators and

multipliers with collector currents in the 1.0 mA to 30 mA range.

Sourced from Process 43. See PN918 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

15

30

2.0

50

-55 to +150

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Max

PN3563

350

2.8

125

357

Units

V

V

V

mA

°C

Units

mW

mW /°C

°C/W

°C/W

 1997 Fairchild Semiconductor Corporation

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