datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FS10AS-3 View Datasheet(PDF) - Mitsumi

Part Name
Description
View to exact match
FS10AS-3
Mitsumi
Mitsumi Mitsumi
FS10AS-3 Datasheet PDF : 4 Pages
1 2 3 4
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
ID = 15A
1.2
10A
0.8
5A
0.4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 10V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
3
2
Ciss
103
7
5
3
2
102
Coss
7
5
Crss
3 Tch = 25°C
2 f = 1MHZ
VGS = 0V
101
3 5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
160
VGS = 10V
120
20V
80
40
0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
103
7
5
4
3 TC = 25°C
75°C
2
125°C
VDS = 10V
Pulse Test
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 80V
5
4
VGS = 10V
RGEN = RGS = 50
3
2
102
7
5
4 tf
3
2
tr
td(off)
td(on)
101100 2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]