FS10AS-3 View Datasheet(PDF) - Mitsumi
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FS10AS-3 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
150
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
122
170 mΩ
—
0.61 0.85
V
—
12
—
S
—
1250
—
pF
—
175
—
pF
—
75
—
pF
—
25
—
ns
—
30
—
ns
—
60
—
ns
—
34
—
ns
—
1.0
1.5
V
—
—
3.57 °C/W
—
100
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 20V 10V 7V 6V
TC = 25°C
Pulse Test
8
6
MAXIMUM SAFE OPERATING AREA
3
2
102
7
5
3
2
tw = 10ms
101
7
5
100ms
3
2
1ms
100
7 TC = 25°C
5 Single Pulse
DC
10ms
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
VGS = 20V 10V 7V 6V
TC = 25°C
Pulse Test
4
5V
3
4
5V
2
2
1
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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