EC103D1 View Datasheet(PDF) - Philips Electronics
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EC103D1 Datasheet PDF : 11 Pages
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Philips Semiconductors
EC103D1
Sensitive gate thyristor
0.6
Ptot
(W)
0.4
0.2
0
0
003aaa111
α = 180ο
α = 120ο
α = 90ο
α = 60ο
α = 30ο
α
0.2
0.4 IT(AV) (A) 0.6
10
ITSM
(A)
8
6
4
2
0
1
003aaa110
10
102
n
103
α = conduction angle
Fig 1. Maximum on-state dissipation as a function of
average on-state current; typical values.
n = number of cycles at f = 50 Hz
Fig 2. Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
1.0
IT(RMS)
(A)
0.8
0.6
0.4
0.2
003aaa116
2.0
IT(RMS)
(A)
1.5
1.0
0.5
003aaa117
0
-50
0
50
100
Tlead
(οC)150
0
10-2
10-1
1 tsurge (s) 10
Fig 3. Maximum permissible on-state current (RMS
value) as a function of lead temperature; typical
values.
f = 50 Hz; Tlead ≤ 83°C.
Fig 4. Maximum permissible repetitive on-state
current (RMS value) as a function of surge
duration for sinusoidal currents; typical values.
9397 750 08574
Product data
Rev. 01 — 1 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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