EC103D1 View Datasheet(PDF) - Philips Electronics

Part Name

Description

View to exact match

EC103D1

Sensitive gate thyristor

Philips Electronics 

Philips Semiconductors

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter

VDRM

VRRM

IT(RMS)

ITSM

repetitive peak off-state voltage

repetitive peak reverse voltage

on-state current (RMS value)

non-repetitive peak on-state current

Conditions

25 °C ≤ Tj ≤ 125 °C

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

VRRM

IT(AV)

IT(RMS)

ITSM

repetitive peak off-state voltage

repetitive peak reverse voltage

average on-state current

on-state current (RMS value)

non-repetitive peak on-state current

25 °C ≤ Tj ≤ 125 °C

half sine wave; Tlead ≤ 83 °C

all conduction angles

half sine wave; Tj = 25 °C prior to

surge

t = 10 ms

t = 8.3 ms

I2t

I2t for fusing

t = 10 ms

dIT/dt rate of rise on-state current

IGM

VGM

VRGM

PGM

PG(AV)

Tstg

Tj

peak gate current

peak gate voltage

peak reverse gate voltage

peak gate power

average gate power

storage temperature

operating junction temperature

ITM = 2.0 A; IG = 10 mA;

dIG/dt = 100 mA/µs

over any 20 ms period

EC103D1

Sensitive gate thyristor

Typ

Max Unit

-

400

V

-

400

V

-

0.8

A

-

8.0

A

Min

Max Unit

-

400

V

-

400

V

-

0.5

A

-

0.8

A

-

8.0

A

-

9.0

A

-

0.32

A2s

-

50

A/µs

-

1.0

Α

-

5.0

V

-

5.0

V

-

2.0

W

-

0.1

W

−40

+150 °C

-

+125 °C

9397 750 08574

Product data

Rev. 01 — 1 November 2001

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

2 of 11

Share Link: