NTMS10P02R2G(2006) View Datasheet(PDF) - ON Semiconductor
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NTMS10P02R2G Datasheet PDF : 6 Pages
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NTMS10P02R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
2.0
VGS = 0 V
TJ = 25°C
1.6
1.2
0.8
0.4
0
0.50
0.55
0.60
0.65
0.70
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
100
100 ms
10
1.0 ms
VGS = 2.5 V
SINGLE PULSE
1.0 TC = 25°C
10 ms
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1.0
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 13. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
10
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
1.0E−05 1.0E−04
1.0E−03
Normalized to qja at 10s.
Chip 0.0163 W 0.0652 W 0.1988 W 0.6411 W 0.9502 W
0.0307 F 0.1668 F 0.5541 F 1.9437 F 72.416 F Ambient
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
1.0E+01 1.0E+02 1.0E+03
Figure 14. Thermal Response
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