NTMS10P02R2G(2006) View Datasheet(PDF) - ON Semiconductor
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NTMS10P02R2G Datasheet PDF : 6 Pages
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NTMS10P02R2
20
−2.3 V −2.1 V
10
VDS ≥ −10 V
15
−10 V
8.0
TJ = 25°C
−3.1 V
−1.9 V
6.0
10
4.0
25°C
5.0
VGS = −1.7 V
2.0
100°C
TJ = −55°C
0
0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0
0
0.5
1.0
1.5
2.0
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.100
0.075
0.050
0.025
ID = −10 A
TJ = 25°C
0.020
TJ = 25°C
0.016
0.012
VGS = −2.5 V
VGS = −4.5 V
0
0.008
0
2.0
4.0
6.0
8.0
10
6.0
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
14
18
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1.6
1.4
ID = −10 A
VGS = −4.5 V
1.2
10,000
VGS = 0 V
1000
TJ = 125°C
1.0
0.8
0.6
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
TJ = 100°C
100
10
2.0
6.0
10
14
18
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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