IDT72605(2013) View Datasheet(PDF) - Integrated Device Technology
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IDT72605 Datasheet PDF : 17 Pages
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IDT72605/72615 CMOS SYNCBiFIFO™
256 x 18x 2 and 512 x 18 x 2
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Industrial
Unit
VTERM
TSTG
Terminal Voltage with
Respect to Ground
Storage Temperature
–0.5 to +7.0
V
–55 to +125
°C
IOUT
DC Output Current
–50 to +50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING
CONDITIONS
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC
Supply Voltage
4.5 5.0 5.5 V
GND Supply Voltage
00
0V
VIH
Input High Voltage
2.0 — — V
VIL(1)
Input Low Voltage
— — 0.8 V
TA
Operating Temperature
-40 — 85 °C
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
DC ELECTRICAL CHARACTERISTICS
(Industrial: VCC = 5V ± 10%, TA = -40°C to +85°C)
IDT72615L
IDT72605L
Industrial
tCLK = 20, 25, 35, 50ns
Symbol
ILI(1)
ILO(2)
Parameter
Input Leakage Current (Any Input)
Output Leakage Current
Min.
Typ.
Max.
Unit
–1
—
1
μA
–10
—
10
μA
VOH
Output Logic "1" Voltage IOUT = –2mA
2.4
—
—
V
VOL
Output Logic "0" Voltage IOUT = 8mA
—
ICC(3)
Active Power Supply Current
—
NOTES:
1. Measurements with 0.4V ≤ VIN ≤ VCC.
2. OEA, OEB ≥ VIH; 0.4 ≤ VOUT ≤ VCC.
3. Tested with outputs open (IOUT = 0). Testing frequency f=20MHz.
—
0.4
V
—
230
mA
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
CIN(2)
COUT(1,2)
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max. Unit
10 pF
10 pF
NOTES:
1. With output deselected.
2. Characterized values, not currently tested.
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