PMBTA13 View Datasheet(PDF) - Philips Electronics

Part Name

Description

View to exact match

PMBTA13

NPN Darlington transistors

Philips Electronics 

Philips Semiconductors

NPN Darlington transistors

Product specification

PMBTA13; PMBTA14

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICBO

IEBO

hFE

VCEsat

VBEon

fT

collector cut-off current

emitter cut-off current

DC current gain

PMBTA13

IE = 0; VCB = 30 V

IC = 0; VEB = 10 V

IC = 10 mA; VCE = 5 V; (see Fig.2)

PMBTA14

DC current gain

PMBTA13

IC = 100 mA; VCE = 5 V; (see Fig.2)

PMBTA14

collector-emitter saturation voltage

base-emitter on-state voltage

transition frequency

IC = 100 mA; IB = 0.1 mA

IC = 100 mA; VCE = 5 V

IC = 10 mA; VCE = 5 V; f = 100 MHz

MIN.

−

−

MAX.

100

100

UNIT

nA

nA

5000 −

10000 −

10000 −

20000 −

−

1.5

−

1.4

125

−

V

V

MHz

80000

handbook, full pagewidth

hFE

60000

MGD837

40000

20000

0

10−1

VCE = 2 V.

1999 Apr 29

1

10

102

Fig.2 DC current gain; typical values.

3

103

IC (mA)

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